Target Laser Exposure of Partial CdTe/Si Dislocations at Low Temperature

The effect of pulsed laser exposure on electronic states formed by partial dislocation cores in cadmium telluride is demonstrated using in situ measurements of low-temperature (5 K) microphotoluminescence. It is shown that laser pulses 5 ns long with a wavelength of 1053 nm allows local transformati...

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Bibliographic Details
Published inBulletin of the Lebedev Physics Institute Vol. 49; no. 4; pp. 99 - 103
Main Authors Chentsov, S. I., Krivobok, V. S., Nikolaev, S. N., Aminev, D. F., Onishchenko, E. E., Klokov, A. Yu
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.04.2022
Springer Nature B.V
Subjects
Cadmium tellurides
Electron states
In situ measurement
Low temperature
Physics
Physics and Astronomy
Pulsed lasers
cadmium telluride
extended defects
photoluminescence
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Summary:The effect of pulsed laser exposure on electronic states formed by partial dislocation cores in cadmium telluride is demonstrated using in situ measurements of low-temperature (5 K) microphotoluminescence. It is shown that laser pulses 5 ns long with a wavelength of 1053 nm allows local transformation of dislocation cores, not affecting the surrounding unperturbed CdTe lattice.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335622040029