Wall coding for a field access bubble device

Device design and margins are given for bubble wall state coding in a field access Permalloy device. The wall states chosen to be the binary states are the S = 1 state and the S = ½, both of which have unsaturated capping layers. The 2.7 μm epitaxial (epi) garnet (YSmGdCaGe) is grown on top of a thi...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on magnetics Vol. 17; no. 3; pp. 1268 - 1270
Main Authors Hannon, D., Desouches, A.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1981
Subjects
Conductors
Detectors
Garnet films
Magnetic materials
Magnetization
Rails
Stability
Testing
Online AccessGet full text

Cover

More Information
Summary:Device design and margins are given for bubble wall state coding in a field access Permalloy device. The wall states chosen to be the binary states are the S = 1 state and the S = ½, both of which have unsaturated capping layers. The 2.7 μm epitaxial (epi) garnet (YSmGdCaGe) is grown on top of a thin (0.2 μm) epi garnet (YNd GdCaGe) layer which has in-plane magnetization and is called a boot. The S = 1 state has 15 percent current margin and 20° phase margin: the S= ½ state has 45 percent current margin and 35° phase margin. The read-write bias margin is 18 Oe and is limited by the deflectometer detector.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.1981.1061214