Wall coding for a field access bubble device
Device design and margins are given for bubble wall state coding in a field access Permalloy device. The wall states chosen to be the binary states are the S = 1 state and the S = ½, both of which have unsaturated capping layers. The 2.7 μm epitaxial (epi) garnet (YSmGdCaGe) is grown on top of a thi...
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Published in | IEEE transactions on magnetics Vol. 17; no. 3; pp. 1268 - 1270 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.05.1981
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Subjects | |
Online Access | Get full text |
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Summary: | Device design and margins are given for bubble wall state coding in a field access Permalloy device. The wall states chosen to be the binary states are the S = 1 state and the S = ½, both of which have unsaturated capping layers. The 2.7 μm epitaxial (epi) garnet (YSmGdCaGe) is grown on top of a thin (0.2 μm) epi garnet (YNd GdCaGe) layer which has in-plane magnetization and is called a boot. The S = 1 state has 15 percent current margin and 20° phase margin: the S= ½ state has 45 percent current margin and 35° phase margin. The read-write bias margin is 18 Oe and is limited by the deflectometer detector. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9464 1941-0069 |
DOI: | 10.1109/TMAG.1981.1061214 |