Strain determination in heterostructures by TEM in selected area electron diffraction mode
The technique for determination of strain and elemental composition distribution across the graded layer in heterostructures by means of selected area electron diffraction in transmission electron microscope (TEM) is proposed. The approach accounts for the modification in the residual elastic strain...
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Published in | Journal of physics. Conference series Vol. 1697; no. 1; pp. 12119 - 12124 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.12.2020
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Online Access | Get full text |
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Summary: | The technique for determination of strain and elemental composition distribution across the graded layer in heterostructures by means of selected area electron diffraction in transmission electron microscope (TEM) is proposed. The approach accounts for the modification in the residual elastic strain due to sample thinning during TEM specimen preparation. The technique is approved using In0,7Ga0,3As/InxAl1-xAs/GaAs(001) and Al0,75Ga0,25N/AlN/Al2O3 heterostructures, and the results are in a good agreement with those obtained by alternative ways. |
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ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/1697/1/012119 |