Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n+-p junctions
Abstract The effect of low-energy proton irradiation on the pulse characteristics of silicon n + -p-p + structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10 15 cm −2 creates a region with an effective lifetime of 5.5·10 −8 s in the space charge...
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Published in | Journal of physics. Conference series Vol. 2094; no. 2; pp. 22006 - 22010 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.11.2021
|
Online Access | Get full text |
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Summary: | Abstract
The effect of low-energy proton irradiation on the pulse characteristics of silicon
n
+
-p-p
+
structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10
15
cm
−2
creates a region with an effective lifetime of 5.5·10
−8
s in the space charge region of the
n
+
-p
junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz. |
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ISSN: | 1742-6588 1742-6596 |
DOI: | 10.1088/1742-6596/2094/2/022006 |