Influence of low-energy proton irradiation on the effective lifetime in the space charge region of silicon n+-p junctions

Abstract The effect of low-energy proton irradiation on the pulse characteristics of silicon n + -p-p + structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10 15 cm −2 creates a region with an effective lifetime of 5.5·10 −8 s in the space charge...

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Published inJournal of physics. Conference series Vol. 2094; no. 2; pp. 22006 - 22010
Main Authors Bogatov, N M, Grigoryan, L R, Kovalenko, M S, Volodin, V S, Voloshin, M A
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2021
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Summary:Abstract The effect of low-energy proton irradiation on the pulse characteristics of silicon n + -p-p + structures is analyzed. It is shown that irradiation with protons with an energy of 180 keV and a dose of 10 15 cm −2 creates a region with an effective lifetime of 5.5·10 −8 s in the space charge region of the n + -p junction. Such elements can be used to create high-speed photodiodes with an operating modulation frequency of 18 MHz.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2094/2/022006