Modeling the Influence of the Edge Electrostatic Effect on the Transformation Function of Thin-Film Quasi-Differential Capacitive Sensitive Elements

• Published in: Journal of physics. Conference series Vol. 2096; no. 1; pp. 12143 - 12150
• Main Author: Mikhailov, P G
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.11.2021
• ISSN: 1742-6588; 1742-6596
• DOI: 10.1088/1742-6596/2096/1/012143

Abstract Capacitive sensing elements are the main components of capacitive measuring transducers, which determine most of the metrological characteristics and operational parameters of sensors. First of all, capacitive sensing elements ensure the temporal and parametric stability of sensors, which are the main operational characteristics in such areas as rocket and space and aviation technology, the nuclear industry, in which the instability of sensors and measuring systems based on them can lead to high financial and human losses. etc. At the same time, compensation for lateral capacitive couplings and electrostatic leaks are very important issues, since small changes in capacitance when measuring physical quantities can lead to uninformative measurements in the presence of distortion of electrostatic fields in a capacitive sensing element. In this regard, it is necessary to take into account and simulate the stray fields of electrostatic fields and their influence on measurements.