An InGaAsSb Based 640 × 512 Focal Plane Array With Low Surface Leakage Current for Extended Shortwave Detection

• Published in: IEEE photonics journal Vol. 17; no. 4; pp. 1 - 6
• Main Authors: Xie, Ruoyu, Shan, Yifan, Yao, Lingze, Wu, Donghai, Su, Xiangbin, Hao, Hongyue, Jiang, Dongwei, Yang, Mengqi, Zhang, Ye, Xie, Hui, Wang, Guowei, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan
• Format: Journal Article
• Language: English
• Published: IEEE 01.08.2025
• Subjects: Aluminum oxide; Atoms; Dark current; Detectors; ESWIR; focal plane array; InGaAsSb; Leakage currents; Metals; Passivation; Surface impedance; Temperature distribution; Temperature measurement

An extended-wavelength InGaAsSb focal plane array (FPA) with a 15 μm pixel pitch, 640 × 512 format, and a cutoff wavelength of 3.22 μm is demonstrated. Through the atomic layer deposition Al 2 O 3 passivation technology, the natural oxide leakage channel is reduced and the leakage current of the dev...