An InGaAsSb Based 640 × 512 Focal Plane Array With Low Surface Leakage Current for Extended Shortwave Detection

An extended-wavelength InGaAsSb focal plane array (FPA) with a 15 μm pixel pitch, 640 × 512 format, and a cutoff wavelength of 3.22 μm is demonstrated. Through the atomic layer deposition Al 2 O 3 passivation technology, the natural oxide leakage channel is reduced and the leakage current of the dev...

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Published inIEEE photonics journal Vol. 17; no. 4; pp. 1 - 6
Main Authors Xie, Ruoyu, Shan, Yifan, Yao, Lingze, Wu, Donghai, Su, Xiangbin, Hao, Hongyue, Jiang, Dongwei, Yang, Mengqi, Zhang, Ye, Xie, Hui, Wang, Guowei, Xu, Yingqiang, Ni, Haiqiao, Niu, Zhichuan
Format Journal Article
LanguageEnglish
Published IEEE 01.08.2025
Subjects
Aluminum oxide
Atoms
Dark current
Detectors
ESWIR
focal plane array
InGaAsSb
Leakage currents
Metals
Passivation
Surface impedance
Temperature distribution
Temperature measurement
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Summary:An extended-wavelength InGaAsSb focal plane array (FPA) with a 15 μm pixel pitch, 640 × 512 format, and a cutoff wavelength of 3.22 μm is demonstrated. Through the atomic layer deposition Al 2 O 3 passivation technology, the natural oxide leakage channel is reduced and the leakage current of the device is well suppressed. The optoelectronic performance of the FPA is close to that of the large-scale test unit. At 180 K, the quantum efficiency of the FPA is 45.6% and the dark current is about 2.76 × 10 −5 A/cm 2 . Laboratory imaging shows potential for applications at temperatures above 200 K.
ISSN:1943-0655
1943-0647
DOI:10.1109/JPHOT.2025.3586862