Modelling of voltage changes in the n-p junction in the pulse mode

Abstract The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of differential equations for the transport of c...

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Published inJournal of physics. Conference series Vol. 2094; no. 2; pp. 22020 - 22024
Main Authors Bogatov, N M, Grigoryan, L R, Klenevsky, A V, Kovalenko, M S, Volodin, V S
Format Journal Article
LanguageEnglish
Published IOP Publishing 01.11.2021
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Summary:Abstract The article presents the results of modeling the effect of the effective lifetime in the space charge region (SCR) of the n+-p junction on the impulse characteristics of silicon structures. The model is based on solving the fundamental system of differential equations for the transport of charge carriers in inhomogeneous semiconductors. The calculated time dependences of the voltage change in the SCR for a pulse voltage change on the n + -p-p + structure correspond to the experimental data.
ISSN:1742-6588
1742-6596
DOI:10.1088/1742-6596/2094/2/022020