A High Power Electro-Absorption Modulated Laser Integrated With SOA Suitable for 50G PON Application

An EML-SOA with emitting wavelength at 1342nm suitable for 50G PON application was developed. For the first time we demonstrated it can emit over 15.3dBm dynamic output power with 8.3dB extinction ratio at 1.5Vpp, clear eye opening was achieved at 50Gb/s and BER measurements show less than 0.1dB pen...

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Published inIEEE photonics technology letters Vol. 36; no. 1; pp. 5 - 7
Main Authors Chen, Xin, Wang, Haibo, Cronin, Richard, Griffiths, James, Talli, Giuseppe, Rosales, Ricardo, Atra, Kebede Tesema, Lin, Youxi, Huang, Rongfang, Pate, Malcolm, Repiso, Eva, Silva, Matteo, Rogers, David, Wang, Chaoyi, Burlinson, Stephen, Berry, Graham, Aivaliotis, Pantelis, Liu, Xuefeng, Zhou, Bo
Format Journal Article
LanguageEnglish
Published New York IEEE 01.01.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
50G PON
Bandwidth
Chirp
distributed reflection laser
electro-absorption modulator
Passive optical networks
Power amplifiers
Power generation
Semiconductor device measurement
Semiconductor laser
semiconductor optical amplifier
Semiconductor optical amplifiers
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Summary:An EML-SOA with emitting wavelength at 1342nm suitable for 50G PON application was developed. For the first time we demonstrated it can emit over 15.3dBm dynamic output power with 8.3dB extinction ratio at 1.5Vpp, clear eye opening was achieved at 50Gb/s and BER measurements show less than 0.1dB penalty observed after 20km transmission.
ISSN:1041-1135
1941-0174
DOI:10.1109/LPT.2023.3330261