Dose and Damage Measurements in Low Dose Ion Implantation in Silicon by Photo-Acoustic Displacement and Minority Carrier Lifetime

Photo-acoustic displacement (PAD) generated with a modulated laser beam pumping is studied for As + or B + implanted Si. At doses above 1×10 13 ions/cm 2 , the PAD has a close relationship to damage density. An ion implantation dose down to 2×10 9 ions/cm 2 can be detected by the PAD measurement. Do...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 30; no. 6A; p. L1025
Main Authors Washidzu, Gen, Hara, Tohru, Ichikawa, Ryuji, Takamatsu, Hiroyuki, Sumie, Shingo, Nishimoto, Yoshiro, Nakai, Yasuhide, Hashizume, Hidehisa, Miyoshi, Tsunemichi
Format Journal Article
LanguageEnglish
Published 01.06.1991
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Summary:Photo-acoustic displacement (PAD) generated with a modulated laser beam pumping is studied for As + or B + implanted Si. At doses above 1×10 13 ions/cm 2 , the PAD has a close relationship to damage density. An ion implantation dose down to 2×10 9 ions/cm 2 can be detected by the PAD measurement. Doses below 2×10 10 ions/cm 2 can be monitored by minority carrier lifetime measurement. A non-destructive high-sensitive dose monitor can be achieved by the PAD and minority carrier lifetime measurements. This monitoring leads to tight control of the threshold voltage of a MOS transistor.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.L1025