Geometry-independent energy band simulator for radially symmetric diodes

• Published in: Journal of physics. D, Applied physics Vol. 49; no. 29; pp. 295102 - 295109
• Main Authors: Kirkpatrick, T, Buonassisi, T
• Format: Journal Article
• Language: English
• Published: IOP Publishing 27.07.2016
• Subjects: analytical; diode; energy band; junction; non-planar; radial
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/0022-3727/49/29/295102

In this work, a geometrically independent method to calculate the energy band diagram of radially symmetric diodes is reported. For radially symmetric diodes, the calculation of electron (or hole) energies across the junction can be reduced to a singular spatially dependent variable. Because geometry is not incorporated into the calculation a priori, by reducing the physics to a single spatial variable, energy band calculations can be performed in multiple geometries, simultaneously, for direct comparison to each other. The calculation outlined herein is pseudo-analytical and does not utilize finite element and/or control volume methods. It is, therefore, capable of generating spatially analytic equations for analyzing limiting scenarios of the junction, beneficial for yielding insight into the physics and design criteria of depletion for non-planar semiconducting devices.