Development and Implementation of a DCM Boost Converter With Multilayer Stacked Circuits Achieving High Voltage Gain

• Published in: IEEE transactions on industrial electronics (1982) Vol. 71; no. 7; pp. 1 - 11
• Main Author: Pai, Kai-Jun
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.07.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Anodes; Capacitors; Cathodes; Circuits; Discontinuous conduction mode (DCM); high step-up ratio; High voltages; High-voltage techniques; Inductance; Inductors; Multilayers; Nonhomogeneous media; peak-current-mode control (PCMC); Prototypes; Pulse duration; stacked circuit; Switches; Topology; Voltage control; Voltage gain
• ISSN: 0278-0046; 1557-9948
• DOI: 10.1109/TIE.2023.3292858

In this article, a high-voltage-gain boost converter (HVGBC) is designed, analyzed, and implemented. The designed HVGBC topology incorporates a single-switch boost converter with multilayer capacitor-inductor-diode-capacitor ( CLDC ) stacked circuits for conversion of low-voltage input into high-voltage output. To reduce the core dimensions and inductor value, HVGBC inductors are designed to operate in discontinuous conduction mode, and peak-current-mode control is used. This study is the first to consider the number of CLDC circuit layers, inductance, and duty cycle of an HVGBC; moreover, element parameter derivations and calculations are provided for determining the withstanding voltages and currents of these elements. Complete design procedures are described in detail for the construction of a low-power HVGBC prototype that is lower than 20 W; this prototype used a commercial pulsewidth modulator to achieve voltage and peak-current-mode control. In the HVGBC, three- and four-layer CLDC stacked circuits were employed to achieve a high step-up ratio.