RF-DC Conversion Efficiency Model for High-Frequency Diodes Using DC-Single Tone Approximation

This letter proposes an improved dc-single tone approximation model to calculate the RF-dc conversion efficiency, voltage sensitivity, and input impedance of rectification circuits comprising <inline-formula> <tex-math notation="LaTeX">n </tex-math></inline-formula>...

Full description

Saved in:
Bibliographic Details
Published inIEEE microwave and wireless components letters Vol. 30; no. 3; pp. 276 - 279
Main Authors Simonov, Nikolai, Kim, Ji-Tae, Ka, Min-Ho
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2020
Subjects
Harmonic analysis
Impedance
Integrated circuit modeling
Junctions
Mathematical model
Microwave circuits
Microwaves
rectifiers
RF-dc conversion efficiency
Schottky diodes
wireless power transfer (WPT)
Online AccessGet full text

Cover

More Information
Summary:This letter proposes an improved dc-single tone approximation model to calculate the RF-dc conversion efficiency, voltage sensitivity, and input impedance of rectification circuits comprising <inline-formula> <tex-math notation="LaTeX">n </tex-math></inline-formula> diodes. The proposed model is based on the energy balance in the rectification circuit and is validated for general cases when the power losses of higher tones are lower than the dc losses. This condition is observed for frequencies at which the capacitor shunts the nonlinear resistor. A comparison of the results obtained using the derived equations and those from the simulation data obtained using a harmonic balance solver confirms the validity and accuracy of this approach for a wide range of output dc voltages and currents.
ISSN:1531-1309
1558-1764
DOI:10.1109/LMWC.2020.2971101