Effect of Proton Energy and Bias Conditions during Irradiation on CMOS Single-Photon Avalanche Diodes

• Published in: IEEE transactions on nuclear science Vol. 71; no. 4; p. 1
• Main Authors: Jouni, Ali, Malherbe, Victor, Mamdy, Bastien, Thery, Thomas, Correas, Vincent, De Paoli, Serge, Lalucaa, Valerian, Virmontois, Cedric, Gasiot, Gilles, Goiffon, Vincent
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Avalanche diodes; CMOS; Coulomb Scattering; dark count rate (DCR); Dark current; Degradation; displacement damage dose (DDD); Energy loss; Energy losses; Inelastic scattering; Irradiation; Mean; Median (statistics); non-ionizing energy loss (NIEL); nuclear reaction; Photon avalanches; Photons; proton; Proton energy; Protons; Radiation; Radiation effects; Radiation tolerance; Scaling; Silicon; Single-Photon avalanche diode (SPAD); Single-photon avalanche diodes
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2023.3334565

Different proton energies were used to irradiate 2D- and 3D-CMOS Single-Photon Avalanche Diodes (SPAD) under different biasing conditions. Discrepancies are underlined between biased SPADs (active irradiation) and unbiased SPADs (passive irradiation) in terms of mean Dark Count Rate (DCR) degradations. Non-Ionizing Energy Loss (NIEL) scaling of the average DCR is then discussed for the two technologies studied, followed by a discussion on the median DCR increase. Coulomb scattering, nuclear elastic and inelastic interactions and their contributions to the total NIEL are used to explain similarities and differences observed for the mean and the median DCR increase, depending on the proton energy. Radiation tolerance comparison between 2D- and 3D-technology is also tackled. Finally, DCR increase distributions are investigated to understand and confirm the analysis on the mean and median DCR alteration.