Minority carrier traps in Cu(In,Ga)(S,Se)2 solar cells

• Published in: Thin solid films Vol. 578; pp. 98 - 102
• Main Author: Choi, In-Hwan
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 02.03.2015
• Subjects: Activation energy; Antisite defects; Buffer layer; Buffers; Cadmium sulfide; Copper indium gallium sulfide selenide; Deep-level transient spectroscopy; Deposition; Diodes; Electrical junctions; N1-type defects; Photovoltaic cells; Solar cells; Zn(S,O); Solar cells; Buffer layer; Deep-level transient spectroscopy; Copper indium gallium sulfide selenide; Zn(S,O); Cadmium sulfide; N1-type defects
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2015.02.011

Cu(In,Ga)(S,Se)2 (CIGSSe)/buffer/ZnO:B heterojunction solar cells were fabricated with two different buffers, CdS (Sample A) and Zn(S,O) (Sample B), which were prepared using a chemical bath deposition wet process and an atomic layer deposition dry process, respectively. The diode properties and deep center properties of Samples A and B were examined as current–voltage, capacitance–voltage, and deep-level transient spectroscopy measurements. Two minority N1 (electron) traps were observed in each CIGSSe solar cell, the activation energies of which were 466meV and 317meV in Sample A and 329meV and 247meV in Sample B, respectively. The activation energy of the N1 level attributed to the InCu-compensating donors, i.e., InCu (+/++) and InCu (0/+) antisite defects, varies with changes in the electric field and potential distribution within the junction. •CIGSSe solar cells were fabricated with two different buffers.•Two minority N1 and N2 (electron) traps were observed in CIGSSe solar cell.•Activation energies were 466meV, 317meV, 329meV and 247meV.•The activation energy of the N1 and N2 levels varied with buffers.