Analysis of Total Ionizing Dose Effects Using Electron Holography

• Published in: IEEE transactions on nuclear science Vol. 71; no. 4; pp. 585 - 590
• Main Authors: Chang, C. T., Apsangi, P., Muthuseenu, K., Privat, A., Kennedy, B., McCartney, M. R., Smith, D. J., Holbert, K. E., Barnaby, H. J.
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Accumulation; CAD; Capacitance; Capacitance-voltage characteristics; Capacitors; Charge distribution; Charge measurement; Computer aided design; Electric potential; electron holography; Electrons; electrostatic potential; Electrostatic properties; Electrostatics; gamma-ray; Holography; Image charge; Irradiation; Metals; metal–oxide-semiconductor (MOS); Oxide coatings; Performance evaluation; phase; radiation effects; Semiconductor device measurement; Silica; Silicon; Silicon dioxide; Thickness; total ionizing dose (TID); Voltage drop
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2024.3355838

The ability to directly image charge accumulation in the irradiated oxide film of the metal-oxide-semiconductor capacitor (MOSCAP) is demonstrated using the electron holography technique. Capacitors with 100 nm thickness of oxide film are fabricated and irradiated using a 60Co gamma source to a target total dose of 450 krad(SiO2). Electric and materials analyses are performed before and after irradiation to study the total ionizing dose (TID) effect. The observed leftward shift in the capacitance-voltage (<inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula>) curve and a larger potential drop near the Si/SiO2 interface mapped by electron holography indicate charge buildup at the irradiated oxide layer. Technology computer-aided design (TCAD) simulations are performed to analyze and validate the electrostatic potential data from holography and also quantify the charge distributions across the oxide layer for both preirradiated and postirradiated devices. A larger amount of positive volumetric charges is added near the oxide/silicon interface for the irradiated sample in order to fit both <inline-formula> <tex-math notation="LaTeX">{C} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> measurement data and electron holography profiles. The good matching between the experimental and simulation results shows evidence that electron holography provides the ability to directly image the charge accumulation at the irradiated oxide layer due to TID effects.