Significant Reduction of 1/f Noise in Organic Thin-Film Transistors With Self-Assembled Monolayer: Considerations of Density-of-States

• Published in: IEEE electron device letters Vol. 45; no. 4; pp. 704 - 707
• Main Authors: Shin, Wonjun, Bae, Jisuk, Park, Joon Hyung, Lee, Jong-Ho, Kim, Chang-Hyun, Lee, Sung-Tae
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.04.2024; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: 1/f noise; Behavioral sciences; Chemicals; Density of states; Dielectrics; LF noise; Logic gates; low-frequency noise; Monolayers; Organic thin film transistors; Organic thin-film transistor (OTFT); Self-assembled monolayers; Self-assembly; Semiconductor devices; Silicon dioxide; Thin film transistors; Wearable devices
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2024.3368129

This study investigates the low-frequency noise characteristics of the <inline-formula> <tex-math notation="LaTeX">{p} </tex-math></inline-formula>-type organic thin-film transistors (OTFTs) with dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) by considering density-of-states (DOS). The OTFTs are fabricated with and without a self-assembled monolayer (SAM) on the SiO2 gate dielectrics. A significant reduction of 1/<inline-formula> <tex-math notation="LaTeX">{f} </tex-math></inline-formula> is observed in the OTFTs with SAM compared to those without SAM. Moreover, this reduction is more pronounced in the high drain current region, indicating that the excess noise is reduced due to the lower DOS resulting from the introduction of SAM.