Performance Improvement Induced by Metal Gate Undercut for Ring Oscillator

The performance of 101-stage ring oscillator is effectively improved by the undercut process of metal gate for 28 nm high-k first metal gate-last planar CMOS technology. Using a simple over-etch process after dummy poly-Si gate formation, the undercut metal gate can be fabricated. The metal gate und...

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Bibliographic Details
Published inIEEE electron device letters Vol. 44; no. 6; p. 1
Main Authors Yan, Zhao-Zhang, Wang, Xue-Jiao, Li, Zhao-Yang, Jing, Quan, Jiang, Yu-Long, Wan, Jing
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Capacitance
Circuits
Integrated circuits
Logic gates
Metal gate undercut
Metals
MOSFET
MOSFET circuits
Oscillators
Overlap capacitance reduction
Polysilicon
Power consumption
Power demand
Ring oscillator
Ring oscillators
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Summary:The performance of 101-stage ring oscillator is effectively improved by the undercut process of metal gate for 28 nm high-k first metal gate-last planar CMOS technology. Using a simple over-etch process after dummy poly-Si gate formation, the undercut metal gate can be fabricated. The metal gate undercut is demonstrated to be able to effectively reduce the overlap capacitance between gate and drain, which further results in over 3.7% improvement of the maximum oscillating frequency at the same integrated circuit active current. While the comparable alternating current performance with reduced power consumption can be obtained.
Bibliography:ObjectType-Article-1
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content type line 14
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2023.3264916