A Novel Approach to Increase the Power Utilization of Nano-Pillar Based CdS/CdTe Solar Cell by Integration of CdS Trench: A Way Forward

An innovative strategy has been employed to boost the efficiency of Nanopillar-based n-CdS/p-CdTe solar cells by integrating a CdS trench (CdST) within the CdTe layer. Through device analysis using TCAD software Silvaco, the CdST demonstrates much desired squared current-voltage characteristics. Mor...

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Bibliographic Details
Published inIEEE electron device letters Vol. 45; no. 7; pp. 1381 - 1384
Main Authors Shyam Krishnan, N., Kumar, Dinesh, Ramasesha, Sheela
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Cadmium compounds
Cadmium sulfide
Cadmium tellurides
CdS trench
CdS/CdTe solar cell
Current voltage characteristics
II-VI semiconductor materials
nanopillar
Nanoscale devices
Nanostructures
Performance evaluation
Performance measurement
photo-voltaic (PV) devices
Photovoltaic cells
Solar cells
TCAD simulation
trench nanopillar
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Summary:An innovative strategy has been employed to boost the efficiency of Nanopillar-based n-CdS/p-CdTe solar cells by integrating a CdS trench (CdST) within the CdTe layer. Through device analysis using TCAD software Silvaco, the CdST demonstrates much desired squared current-voltage characteristics. Moreover, the performance metrics of the device have been fine-tuned by optimizing the geometrical parameters of the CdS trench, including its width, depth, and placement. Compared to the conventional Nanopillar Based n-CdS/p-CdTe structure without a CdS trench (CNP), the optimized geometry incorporating a CdS trench has demonstrated an improvement of 5% in efficiency (EFF) and 13% in fill factor (FF).
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3404028