Improvements in the Maximum THz Output Power and Responsivity in Near-Ballistic Uni-Traveling-Carrier Photodiodes With an Undercut Collector

We demonstrate a novel ultra-fast photodiode structure that fundamentally relaxes the trade-offs between the speed, responsivity, and saturation power at sub-THz regime. Our device, with its 3 μm wide undercut collector profile, exhibits a DC responsivity (0.11 A/W) which is close in value to that r...

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Bibliographic Details
Published inJournal of lightwave technology Vol. 42; no. 7; pp. 2362 - 2370
Main Authors Huang, Yu-Cyuan, Chen, Nan-Wei, Wu, Yen-Kun, Naseem, Shi, Jin-Wei
Format Journal Article
LanguageEnglish
Published New York IEEE 01.04.2024
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Bandwidth
Flip-chip devices
Frequency measurement
III-V semiconductor materials
Indium phosphide
Photodiode
Photodiodes
Power generation
Ultrafast optics
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Summary:We demonstrate a novel ultra-fast photodiode structure that fundamentally relaxes the trade-offs between the speed, responsivity, and saturation power at sub-THz regime. Our device, with its 3 μm wide undercut collector profile, exhibits a DC responsivity (0.11 A/W) which is close in value to that reported for uni-traveling-carrier photodiodes (UTC-PDs) with similar sized active diameters (∼10 μm), but has a much larger 3-dB optical-to-electrical (O-E) bandwidth (220 GHz vs. around 75 GHz). This leads to much less optical power being required to deliver a close value of THz output power at the same operating frequency. Furthermore, the responsivity (0.11 vs. 0.1 A/W) and output power (0.4 vs. −2.4 dBm@165 GHz) are higher than those of reference devices without the undercut collector layer but with a miniaturized active diameter as small as 3 μm.
ISSN:0733-8724
1558-2213
DOI:10.1109/JLT.2023.3340502