Microstructure of Group III‐N Nanowires

This chapter reviews the structural properties of III‐N nanowires. It introduces the wurtzite and zinc‐blende crystal structures, the building block concept and the close relationship along the close‐packed planes of both structures. The chapter then describes the shape and morphology of III‐N nanow...

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Bibliographic Details
Published inWide Band Gap Semiconductor Nanowires 1 pp. 125 - 156
Main Authors Trampert, Achim, Kong, Xiang, Luna, Esperanza, Grandal, Javier, Jenichen, Bernd
Format Book Chapter
LanguageEnglish
Published Hoboken, NJ, USA John Wiley & Sons, Inc 30.06.2014
Subjects
III‐N nanowires
polarity
stacking faults
transmission electron microscopy (TEM)
wurtzite
zinc‐blende crystal structures
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Summary:This chapter reviews the structural properties of III‐N nanowires. It introduces the wurtzite and zinc‐blende crystal structures, the building block concept and the close relationship along the close‐packed planes of both structures. The chapter then describes the shape and morphology of III‐N nanowires as well as their influences on macroscopic (nanowire ensemble) and microscopic strain states measured by x‐ray diffraction. The polarity of hexagonal nanowires is an important physical parameter and its determination with high spatial resolution is proven by channeling‐enhanced electron energy‐loss spectroscopy in combination to transmission electron microscopy (TEM). Nanowires are often considered as ideal crystals with high structural perfection (similar to whiskers) without crystalline defects. The different types of stacking faults as well as inversion domain boundaries are described and experimentally verified. The chapter then discusses Misfit dislocations in connection with interfaces.
ISBN:1848215975
9781848215979
DOI:10.1002/9781118984321.ch6