Low-Temperature Solution-Processed ZnSnO Ozone Gas Sensors Using UV-Assisted Thermal Annealing
Ultraviolet-assisted thermal annealing (UVTA) has been widely used to fabricate solution-processed amorphous oxide semiconductor (AOS)-based transistors and photodetectors. However, this method has not been used for AOS-based gas sensors, even though AOS is a good gas sensing material. This study de...
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Published in | Journal of the Electrochemical Society Vol. 169; no. 11; pp. 117505 - 117510 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
IOP Publishing
01.11.2022
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Online Access | Get full text |
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Summary: | Ultraviolet-assisted thermal annealing (UVTA) has been widely used to fabricate solution-processed amorphous oxide semiconductor (AOS)-based transistors and photodetectors. However, this method has not been used for AOS-based gas sensors, even though AOS is a good gas sensing material. This study determines the effect of UVTA on the electrical properties of In-free amorphous ZnSnO (ZTO) thin films and their ozone (O
3
) gas sensing characteristics. UV light from a Mercury lamp has sufficient energy to decompose the organic- and hydrogen-based impurities completely, which promotes the formation of metal oxide networks, so the quality of ZTO films is greatly increased by increasing treatment time. A relatively high gas response of 1.42 with a fast response/recovery time (124/78 s) is achieved. This strategy allows the fabrication of ZTO gas sensors at low temperature (150 °C) and is applicable to flexible electronics. |
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Bibliography: | JES-108718.R2 |
ISSN: | 0013-4651 1945-7111 |
DOI: | 10.1149/1945-7111/ac9f80 |