Nanoscale Epitaxial Lateral Overgrowth of GaN-Based Light-Emitting Diodes on an AlN Nanorod-Array Template

Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 51; no. 5; pp. 1 - 5
Main Authors Tsai, Chen-Hung, Ma, Mu-Hsin, Yin, Yu-Feng, Li, Hsiang-Wei, Lai, Wei-Chih, Huang, Jianjang
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2015
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Buffer layer
Epitaxy
Light emitting diodes
Light-emitting diodes
epitaxy
buffer layer
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Summary:Despite the rapid progress of GaN light-emitting diodes, the quest for better epistructure quality with less defects and relaxed strains to achieve higher internal quantum efficiency has been a popular topic. Here, we propose an AlN nanorod template grown on the sapphire substrate using vapor-liquid-solid method. The corresponding material quality, including voids near nanorods, Raman spectra, and transmission electron microscopy images, indicates significant improvement.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2015.2412957