Light emitters based on II-VI chalcogenides with nanostructured surface

A modified surface was obtained on wide-gap II-VI compounds. The methods of thermal annealing for cadmium chalcogenides and chemical etching for the first time obtained heterolayers of atypical hexagonal modification of α-ZnSe have been improved. AFM topograms of surface nanostructures have been inv...

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Bibliographic Details
Published inMolecular Crystals and Liquid Crystals Vol. 752; no. 1; pp. 95 - 102
Main Authors Mazur, T. M., Slyotov, M. M., Prokopiv, V. V., Slyotov, O. M., Mazur, M. P.
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis 2023
Taylor & Francis Ltd
Subjects
1-x
Cadmium
cadmium and zinc chalcogenides
Chalcogenides
Chemical etching
Emission spectra
Emitters
heterostructures
Optical properties
surface nanostructures
Te solid solutions
α-ZnSe heterolayers
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Summary:A modified surface was obtained on wide-gap II-VI compounds. The methods of thermal annealing for cadmium chalcogenides and chemical etching for the first time obtained heterolayers of atypical hexagonal modification of α-ZnSe have been improved. AFM topograms of surface nanostructures have been investigated and comprehensive studies of optical and luminescent properties have been carried out. The emission spectra were determined in the photon energy range 1.4-3.6 eV and the important role of recombination processes in the formation of the A band in the edge region was established. The dominant role of quantum-dimensional processes in the formation of the obtained B band of intense radiation in a wide spectral region of the visible and ultraviolet ranges has been established.
ISSN:1542-1406
1563-5287
1527-1943
DOI:10.1080/15421406.2022.2091276