Charged precipitate scattering of electrons in silicon

The mobilities of electrons have been measured from 15 K to 300 K on CZ-silicon crystals, which are initially P-type and then transformed into N-type after being heat-treated at 670 and 720 degree C, respectively. It has been found that the mobilities of electrons depend on the heat-treatment regime...

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Bibliographic Details
Published inPhysica scripta Vol. 37; no. 5; pp. 800 - 802
Main Authors Lei, Zhong, Jinxing, Shi, Seming, She
Format Journal Article
LanguageEnglish
Published Stockholm IOP Publishing 01.05.1988
Royal Swedish Academy of Sciences
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Mixed conductivity and conductivity transitions
Physics
Precipitation
Heat treatment
Electrical conductivity
Semiconductor materials
Charge carrier mobility
Hall effect
Silicon
Experimental study
Single crystal
Electrons
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Summary:The mobilities of electrons have been measured from 15 K to 300 K on CZ-silicon crystals, which are initially P-type and then transformed into N-type after being heat-treated at 670 and 720 degree C, respectively. It has been found that the mobilities of electrons depend on the heat-treatment regime in a complicated manner provided the ionized impurity scattering is predominant. Based upon the model of new donors proposed, a new scattering process caused by charged precipitate is assumed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1402-4896
0031-8949
1402-4896
DOI:10.1088/0031-8949/37/5/025