Characterization of ZnO―SnO2 thin film composites prepared by pulsed laser deposition

• Published in: Applied surface science Vol. 257; no. 24; pp. 10551 - 10556
• Main Authors: SINHA, S. K, RAKSHIT, T, RAY, S. K, MANNA, I
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.10.2011
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Crystal structure; Deposition; Diffraction; Energy gap; Exact sciences and technology; Opacity; Physics; Pulsed lasers; Thin films; Zinc oxide; Inorganic compounds; Composite; Transition element compounds; Photoluminescence; Pulsed laser deposition; Pulsed lasers; Film growth; Thin films; Energy gap; Composite materials; Pulsed laser ablation; Zinc oxide; Laser ablation technique; Band gap
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2011.07.049

Thin films of ZnO-SnO2 composites have been deposited on Si(100) and glass substrates at 500 degree C by pulsed laser ablation using different composite targets with ZnO amount varying between 1 and 50wt%. The effect of increasing ZnO-content on electrical, optical and structural properties of the ZnO-SnO2 films has been investigated. X-ray diffraction analysis indicates that the as-deposited ZnO-SnO2 films can be both crystalline (for ZnO<1wt%) and amorphous (for ZnO greater than or equal to 10wt%) in nature. Atomic force microscopy studies of the as-prepared composite films indicate that the surfaces are fairly smooth with rms roughness varying between 3.07 and 2.04nm. The average optical transmittance of the as-deposited films in the visible range (400-800nm), decreases from 90% to 72% for increasing ZnO concentration in the film. The band gap energy (E