Dielectric properties of Ln(Mg1/2Ti1/2)O3 as substrates for high-Tc superconductor thin films

• Published in: Journal of materials research Vol. 14; no. 6; pp. 2484 - 2487
• Main Authors: Cho, Seo-Yong, Kim, Chang-Hun, Kim, Dong-Wan, Hong, Kug Sun, Kim, Jong-Hee
• Format: Journal Article
• Language: English
• Published: New York, USA Cambridge University Press 01.06.1999
• ISSN: 0884-2914; 2044-5326
• DOI: 10.1557/JMR.1999.0333

Ln(Mg1/2Ti1/2)O3 (Ln = Dy, La, Nd, Pr, Sm, Y) compositions have been prepared, and their pertinent properties for use as thin film substrates for YBa2Cu3Ox (YBCO) were measured. X-ray diffraction shows that Ln(Mg1/2Ti1/2)O3 compositions have noncubic symmetry and the GdFeO3-type structure. Dielectric constant measurements revealed values between 22 and 27, which are larger than those of the LnAlO3 family. Quality factor (=1/ tan δ) of the ceramic specimens measured at room temperature was larger than 3000 at 10 GHz. Among the compounds, La(Mg1/2Ti1/2)O3 exhibited the highest dielectric constant and the lowest dielectric loss. Chemical reaction was observed between Ln(Mg1/2Ti1/2)O3 (Ln = Dy, Sm, Y) and YBCO after annealing a 1 : 1 mixture at 950 °C. Considering dielectric and physical properties, La(Mg1/2Ti1/2)O3 and Sm(Mg1/2Ti1/2)O3 were determined to be suitable substrates for YBCO thin film used in microwave applications.