Dark-line-resistant diode laser at 0.8 mu m comprising InAlGaAs strained quantum well

Quantum-well lasers emitting at 0.8 mu m and resistant to

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 3; no. 5; pp. 409 - 411
Main Authors Waters, R.G., Dalby, R.J., Baumann, J.A., De Sanctis, J.L., Shepard, A.H.
Format Journal Article
LanguageEnglish
Published IEEE 01.05.1991
Subjects
Aluminum
Diode lasers
Gallium arsenide
Indium gallium arsenide
Laser modes
Lattices
MOCVD
Pump lasers
Quantum well lasers
Semiconductor lasers
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Summary:Quantum-well lasers emitting at 0.8 mu m and resistant to
ISSN:1041-1135
1941-0174
DOI:10.1109/68.93861