The study of optimal oxidation time and different temperatures for high quality VO2 thin film based on the sputtering oxidation coupling method

• Published in: Applied surface science Vol. 257; no. 21; pp. 8824 - 8827
• Main Authors: Xu, Xiaofeng, He, Xinfeng, Wang, Gang, Yuan, Xiaolong, Liu, Xingxing, Huang, Haiyan, Yao, Sheng, Xing, Huaizhong, Chen, Xiaoshuang, Chu, Junhao
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 15.08.2011
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Joining; Mathematical models; Metal-insulator transition; Optimization; Oxidation; Physics; Sputtering; Thin films; Vanadium oxides; Thin films; Temperature; Transition elements; Vanadium dioxide; Vanadium; Oxidation; Sputtering oxidation coupling; Sputtering; Optimal oxidation time
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2011.04.068

The high quality Vanadium dioxide (VO2) thin films have been fabricated successfully on sapphire by a simple novel sputtering oxidation coupling (SOC) method. All VO2 thin film samples exhibit a good metal-insulator transition (MIT) at about 340K. The optimal oxidation time at different temperatures has been experimentally investigated. We report on the relationship between optimal oxidation time and different temperatures of metal vanadium thin film samples of 101nm thickness by oxidation in air. It is found that the optimal oxidation time ln(t) as a function of temperature 1/T shows a significant linear relationship among 703K-783K, in good agreement with the Wagner's high-temperature oxidation model.