Aluminum-Copper Bilayers Thin Films Deposited at Room Temperature by RF Magnetron Sputtering

In this work, the effects of room temperature deposition on the structural properties of Al-Cu bilayers thin films were investigated. The bilayers were sputter deposited by RF magnetron sputtering on Si {100} wafers without substrate heating. The thickness of each layer is approximately 500 nm thick...

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Published inApplied Mechanics and Materials Vol. 606; no. Materials, Industrial and Manufacturing Engineering Research Advances 1.2; pp. 105 - 109
Main Authors Mat Yajid, Muhamad Azizi, Rosli, Zulkifli Mohd, M. Ali, Riyaz Ahmad, Abdul Halim, Zulhelmi Alif
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.08.2014
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Summary:In this work, the effects of room temperature deposition on the structural properties of Al-Cu bilayers thin films were investigated. The bilayers were sputter deposited by RF magnetron sputtering on Si {100} wafers without substrate heating. The thickness of each layer is approximately 500 nm thick. Characterization were performed with grazing incidence X-ray diffraction (XRD) cross-sectional field emission scanning electron microscope (FE-SEM) with chemical analysis by energy dispersive X-ray (EDX) and atomic force microscope (AFM). It was found polycrystalline Al and Cu thin films have been grown with {111} preferred growth orientation with very fine crystallites size (less than 20 nm). The bilayers were in non-strained condition, but each layer shows different morphologies between the columnar and non columnar structure. AFM analysis revealed that the bilayers top surface appears to have higher surface roughness (Ra = 20 nm) due to low adatoms surface mobility during room temperature deposition.
Bibliography:Selected, peer reviewed papers from the 1st International Materials, Industrial and Manufacturing Engineering Conference (MIMEC 2013), December 4-6, 2013, Johor Bahru, Malaysia
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ISBN:3038351830
9783038351832
ISSN:1660-9336
1662-7482
1662-7482
DOI:10.4028/www.scientific.net/AMM.606.105