Influence of Substrate Temperature on Microstructure and Properties of Ti-Si-C Film

Ti-Si-C films were prepared on cemented carbide by chemical vapor deposition. The reactive gas system was CH4, (CH3)4Si, TiCl4 and H2. The film was analyzed and tested by SEM, AFM, EDS, XPS, microhardness tester, friction and wear tester. The results indicate that the film is continuous and dense. A...

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Bibliographic Details
Published inKey Engineering Materials Vol. 693; pp. 813 - 820
Main Authors Chen, Yao Guang, Lu, Wen Zhuang, Zuo, Dun Wen, Liu, Sen
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.05.2016
Subjects
Adhesion
Cemented carbides
Friction
Hardness
Microstructure
Substrates
Titanium
X-ray photoelectron spectroscopy
Substrate Temperature
Friction Performance
Ti-Si-C
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Summary:Ti-Si-C films were prepared on cemented carbide by chemical vapor deposition. The reactive gas system was CH4, (CH3)4Si, TiCl4 and H2. The film was analyzed and tested by SEM, AFM, EDS, XPS, microhardness tester, friction and wear tester. The results indicate that the film is continuous and dense. At higher substrate temperature, the hardness of the film will be higher. When the substrate temperature is 850°C, the adhesion of the film is highest with coefficient of friction only 0.14.
Bibliography:Special topic volume with invited peer reviewed papers only
ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISBN:3038357138
9783038357131
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.693.813