Analytical Evaluation of Thermally Oxidized and Deposited Dielectric in NMOS-PMOS devices

• Published in: Materials Science Forum Vol. 858; pp. 631 - 634
• Main Authors: Idris, Muhammad I., Young, R.A.R., Smith, D.A., Weng, Ming Hung, Horsfall, Alton B., Murphy, A.E., Chan, H.K., Ramsay, E.P., Clark, D.T.
• Format: Journal Article
• Language: English
• Published: Pfaffikon Trans Tech Publications Ltd 24.05.2016
• Subjects: Capacitors; Channels; Circuit design; Circuits; CMOS; Dielectrics; Electric fields; High temperature; Materials science; Oxidation; Oxides; Semiconductor devices; Silicon carbide; Transistors; United Kingdom > UK; CMOS; MOSFET; N-MOS; p-MOS; Channel Field-Effect Mobility; C-V Measurements
• ISBN: 3035710422; 9783035710427
• ISSN: 0255-5476; 1662-9752; 1662-9752
• DOI: 10.4028/www.scientific.net/MSF.858.631

We demonstrate the influence of enhancing the dielectric film used to form the gate in complimentary MOS circuits, designed for high temperature operation. The data show that the characteristics of both n-MOS and p-MOS capacitors and transistors have degraded capacitance characteristics in terms of the trapped charge in the dielectric, although the interface state density is dictated by the underlying stub oxide, at around 5×1012 cm-2eV-1. The use of a deposited oxide also reduces the variability in the critical electric field in the oxide, whilst maintaining a value of approximately 10MV cm-1. The channel mobility extracted from n-and pMOS transistors fabricated alongside the capacitors showed similar values, of approximately 3.8 cm2V-1s-1, which are limited by the high doping level in the epilayers used in this study.