Distribution of Dislocations near the Junction Formed by Diffusion of Phosphorus in Silicon
The distribution of dislocations near the junction formed by diffusion of phosphorus in silicon has been observed by means of etching technique. High density dislocations generated by diffusion of phosphorus penetrate to the depth of 3µ or more from the junction. The front of the dislocation net wor...
Saved in:
| Published in | Japanese Journal of Applied Physics Vol. 3; no. 9; p. 511 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
1964
|
| Online Access | Get full text |
Cover
Loading…
| Summary: | The distribution of dislocations near the junction formed by diffusion of phosphorus in silicon has been observed by means of etching technique. High density dislocations generated by diffusion of phosphorus penetrate to the depth of 3µ or more from the junction. The front of the dislocation net work goes further than the collector junction, when a transistor is produced by double diffusion technique. Drive-in phenomenon found in this process is attributable to enhanced diffusion by dislocations generated by diffusion procedure. |
|---|---|
| ISSN: | 0021-4922 1347-4065 |
| DOI: | 10.1143/JJAP.3.511 |