A Low-Noise X-Band Parametric Amplifier Using a Silicon Mesa Diode

This paper summarizes a cooperative effort to develop silicon mesa variable-capacitance diodes and to evaluate their potential for achieving low-noise amplification in the high microwave frequency range. Cutoff frequencies of about 70 kMc at zero-bias voltage (corresponding to 140 kMc at maximum rev...

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Bibliographic Details
Published inI.R.E. transactions on microwave theory and techniques Vol. 9; no. 1; pp. 39 - 43
Main Authors Weglein, R.D., Keywell, F.
Format Journal Article
LanguageEnglish
Published 01.01.1961
Subjects
Bandwidth
Cutoff frequency
Diodes
Low-noise amplifiers
Microwave frequencies
Microwave radiometry
Radiofrequency amplifiers
Silicon
Temperature sensors
Voltage
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Summary:This paper summarizes a cooperative effort to develop silicon mesa variable-capacitance diodes and to evaluate their potential for achieving low-noise amplification in the high microwave frequency range. Cutoff frequencies of about 70 kMc at zero-bias voltage (corresponding to 140 kMc at maximum reverse bias voltage) with a total permissible voltage swing in excess of 5 volts have been obtained. A versatile degenerate X-band parametric amplifier was developed which, when used in conjunction with these silicon mesa diodes, achieved a radiometer noise temperature of 130°K at 8.5 kMc with a 50-Mc bandwidth at 17-db gain. The measured performance of the diode (figure of merit) is compared with the first-order theory in an operating radar system. The over-all performance of the amplifier improved the observed system sensitivity by 6 db.
ISSN:0097-2002
2331-088X
DOI:10.1109/TMTT.1961.1125261