Effect of manganese doping on Li-ion intercalation properties of V2O5 films

• Published in: Journal of materials chemistry Vol. 2; no. 48; pp. 1841 - 1846
• Main Authors: Yu, D. M, Zhang, S. T, Liu, D. W, Zhou, X. Y, Xie, S. H, Zhang, Q. F, Liu, Y. Y, Cao, G. Z
• Format: Journal Article
• Language: English
• Published: 01.01.2010
• Subjects: Atomic force microscopy; Current density; Intercalation; Manganese; Stability; Vanadium pentoxide; X-ray photoelectron spectroscopy; X-rays
• ISSN: 0959-9428; 1364-5501
• DOI: 10.1039/c0jm01252a

Mn-doped V 2 O 5 has been prepared by sol-gel processing with H 2 O 2 and V 2 O 5 as precursors with Mn 2+ added directly during sol preparation. Stable and homogeneous Mn-doped vanadium oxide sol was obtained and the films were fabricated by dip-coating, drying at ambient, and then annealing at 250 °C in air for 3 h. X-Ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and electrochemical analyses have been employed to characterize and analyze the crystal- and microstructures, surface morphology and Li-ion intercalation properties of both Mn-doped and undoped V 2 O 5 films. Mn-doped V 2 O 5 films exhibit excellent cyclic stability with a fading rate of less than 0.06% per cycle, significantly better than that of the pure V 2 O 5 films (0.8% per cycle). Mn-doped V 2 O 5 films have demonstrated a large discharge capacity of ∼283mAh/g with a current density of 68 mA/g, again much higher than 237 mAh/g of V 2 O 5 films. A possible explanation for such significant enhancement in lithium ion intercalation capacity, cyclic stability, and rate performance of Mn-doped V 2 O 5 films has been discussed. Mn-doped V 2 O 5 films prepared by a simple H 2 O 2 -V 2 O 5 sol-gel process with the direct addition of manganese salt exhibit excellent cyclic stability with a fading rate of less than 0.06% per cycle, significantly better than that of the pure V 2 O 5 films, and with a large discharge capacity of ∼283mAh/g at a current density of 68 mA/g, again much higher than that of V 2 O 5 films.