Optical emission spectroscopy investigation of sputtering discharge used for SiOxNy thin films deposition and correlation with the film composition

• Published in: Applied surface science Vol. 252; no. 15; pp. 5611 - 5614
• Main Authors: REBIB, F, TOMASELLA, E, THOMAS, L, CELLIER, J, SAUVAGE, T, JACQUET, M
• Format: Conference Proceeding Journal Article
• Language: English
• Published: Amsterdam Elsevier Science 30.05.2006
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Physics; Thin films; Optical spectrometry; 52.80.Pi; 52.70.Gw; Silicon oxynitride; Reactive sputtering; Optical emission spectroscopy; Emission spectroscopy; Reactive sputtering; Silicon; Sputtering; Film growth
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2005.12.130

The r.f. discharge of sputtering silicon target using argon-oxygen-nitrogen plasma was investigated by optical emission spectroscopy. Electronic temperature (Te) and emission line intensity were measured for different plasma parameters: pressure (from 0.3 to 0.7 Pa), power density (0.6-5.7 W CM-2 ) and gas composition. At high oxygen concentration in the plasma, both Te and the target self-bias'voltage (Vb) steeply decrease. Such behaviour traduces the target poisoning phenomenon. In order to control the deposition process, emission line intensity of different species present in the plasma were compared to the ArI (~ = 696.54 nm) line intensity and then correlated to the film composition analysed by Rutherford Backscattering Spectroscopy.