Structural optimization, interfacial contact, and transverse thermoelectric properties of Ag2Te/Bi0.5Sb1.5Te3 artificially tilted multilayer thermoelectric devices

• Published in: Applied physics. A, Materials science & processing Vol. 130; no. 6
• Main Authors: Yang, Maojun, Ding, Zhiqiang, Wei, Ping, Li, Longzhou, Zhu, Wanting, Nie, Xiaolei, Zhao, Wenyu
• Format: Journal Article
• Language: English
• Published: Berlin/Heidelberg Springer Berlin Heidelberg 01.06.2024
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Machines; Manufacturing; Nanotechnology; Optical and Electronic Materials; Physics; Physics and Astronomy; Processes; Surfaces and Interfaces; Thin Films; Power generation; Transverse thermoelectric device; Interface contact; Thermal response
• ISSN: 0947-8396; 1432-0630
• DOI: 10.1007/s00339-024-07538-z

Artificially tilted multilayer thermoelectric devices (ATMTDs) have attracted widespread attention due to their advantages of simple and stable structure. In this study, n-type Ag 2 Te and p-type Bi 0.5 Sb 1.5 Te 3 (BiSbTe), as two typically excellent room-temperature thermoelectric materials, were used to assemble ATMTDs. The interface structure and chemical composition of Ag 2 Te/BiSbTe ATMTDs were characterized and their transverse thermoelectric performance was evaluated. The results indicated that the interfacial diffusion and reaction at Ag 2 Te/BiSbTe interface leads to the formation of AgSbTe 2 phase with thickness approximately 22 μm and the interface established an ohmic-type electrical contact with a small contact resistance. After structural optimization, the Ag 2 Te/BiSbTe ATMTD with titled angle 45° and aspect ratio 3 exhibited a large transverse voltage of reaches 6.78 mV at a temperature difference of 80 K, reaching 91.1% of the theoretical value. This work demonstrates that Ag 2 Te/BiSbTe ATMTDs possess a good interfacial contact and transverse thermoelectric performance without significant power loss, maintaining excellent power generation and thermal response properties.