Systematic Study of the Effects of Modulation p-Doping on 1.3- \mu} Quantum-Dot Lasers

• Published in: IEEE journal of quantum electronics Vol. 43; no. 12; pp. 1129 - 1139
• Main Authors: Alexander, R.R., Childs, D.T.D., Agarwal, H., Groom, K.M., Hui-Yun Liu, Hopkinson, M., Hogg, R.A., Ishida, M., Yamamoto, T., Sugawara, M., Arakawa, Y., Badcock, T.J., Royce, R.J., Mowbray, D.J.
• Format: Journal Article
• Language: English
• Published: IEEE 01.12.2007
• Subjects: Collaboration; Diode lasers; Doping; Gain; Light emitting diodes; Nanoelectronics; Quantum dot lasers; Quantum dots; Quantum well lasers; quantum-dot (QD) laser; small signal modulation; Surface emitting lasers; Temperature; {\rm T}_{0}
• ISSN: 0018-9197; 1558-1713
• DOI: 10.1109/JQE.2007.907213

The effects of modulation p-doping on 1.3-mum InGaAs-InAs quantum-dot (QD) lasers are systematically investigated using a series of wafers with doping levels from 0 to 18 acceptors per QD. Various characterization techniques for both laser diodes and surface-emitting light-emitting diode structures are employed. We report: 1) how the level of modulation p-doping alters the length dependant laser characteristics (in turn providing insight on various key parameters); 2) the effect of modulation p-doping on the temperature dependence of a number of factors and its role in obtaining an infinite T 0 ; 3) how increasing concentrations of modulation p-doping affects the saturated gain, differential gain, and gain profile of the lasers; and finally, 4) the effect modulation p-doping has on the small signal modulation properties of 1.3-mum QD lasers. In each of these areas, the role of modulation p-doping is established and critically discussed.