Impact of Dielectrics in SOI FinFET for Lower Power Consumption in Punch-through Current-based Local Thermal Annealing

• Published in: Journal of semiconductor technology and science Vol. 21; no. 3; pp. 222 - 228
• Main Authors: Cha, Dong-Woo, Park, Jun-Young
• Format: Journal Article
• Language: English
• Published: 대한전자공학회 01.06.2021
• Subjects: 전기공학; punch-through; Annealing; FinFET; reliability; hot-carrier injection (HCI); logic transistors; dielectric

Impact of device geometric structures and materials is discussed to improve power efficiency of punch-through current based electro-thermal annealing (ETA). Various sensitivities that affect device temperature during ETA are extracted and compared. Then, dielectric engineering in terms of thermal co...