Impact of Dielectrics in SOI FinFET for Lower Power Consumption in Punch-through Current-based Local Thermal Annealing
Impact of device geometric structures and materials is discussed to improve power efficiency of punch-through current based electro-thermal annealing (ETA). Various sensitivities that affect device temperature during ETA are extracted and compared. Then, dielectric engineering in terms of thermal co...
Saved in:
| Published in | Journal of semiconductor technology and science Vol. 21; no. 3; pp. 222 - 228 |
|---|---|
| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
대한전자공학회
01.06.2021
|
| Subjects | |
| Online Access | Get full text |
Cover
Loading…
| Abstract | Impact of device geometric structures and materials is discussed to improve power efficiency of punch-through current based electro-thermal annealing (ETA). Various sensitivities that affect device temperature during ETA are extracted and compared. Then, dielectric engineering in terms of thermal conductivity and thermal isolation is suggested for better power management. Finally, time-dependent characteristics with various thicknesses of buried dielectric layer are discussed to improve annealing speed. As a result, the contents of this paper provide a guide to better application of ETA. KCI Citation Count: 1 |
|---|---|
| AbstractList | Impact of device geometric structures and materials is discussed to improve power efficiency of punch-through current based electro-thermal annealing (ETA). Various sensitivities that affect device temperature during ETA are extracted and compared. Then, dielectric engineering in terms of thermal conductivity and thermal isolation is suggested for better power management. Finally, time-dependent characteristics with various thicknesses of buried dielectric layer are discussed to improve annealing speed. As a result, the contents of this paper provide a guide to better application of ETA. KCI Citation Count: 1 |
| Author | Jun-Young Park Dong-Woo Cha |
| Author_xml | – sequence: 1 givenname: Dong-Woo surname: Cha fullname: Cha, Dong-Woo – sequence: 2 givenname: Jun-Young surname: Park fullname: Park, Jun-Young |
| BackLink | https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002725519$$DAccess content in National Research Foundation of Korea (NRF) |
| BookMark | eNp9kEtP4zAUhS3ESBSGPzArb1iwSPEjtpNlVV5FFUW0s7YcP1oPqV05CWj-_TiAWMwC6eqezfnu45yC4xCDBeAXRlPGBL16WG_WU4IInuaiU0LIEZgQQmlRVpwfgwlmdVVgzsQJOO26PwjxStRiAl4X-4PSPYwOXnvbWt0nrzvoA1yvFvDWh9ubDXQxwWV8swk-vfd5DN2wP_Q-htH5NAS9K_pdisN2B-dDSjb0RaM6azKmVQs3O5v2WWchWNX6sP0JfjjVdvb8U8_A77xofl8sV3eL-WxZaFLivjAN4cY5VTIkGssrYxzX1mKdP-WloDWhqNGuZqasNEaaV6hhSqvGUIsMU_QMXH7MDcnJF-1lVP5dt1G-JDl73ixkLeqqrkX2Vh9enWLXJeuk9r0an-yT8q3ESI5ZyzFrOWYtc1GZs84o-Q89JL9X6e_30MXnbUM2W-PVF_W4ur7BiAlCiaD_AKSdkf4 |
| CitedBy_id | crossref_primary_10_3390_mi13070987 crossref_primary_10_35848_1347_4065_ad41ad crossref_primary_10_1007_s42341_022_00422_8 crossref_primary_10_1109_ACCESS_2024_3384428 crossref_primary_10_1016_j_microrel_2023_115276 |
| ContentType | Journal Article |
| DBID | DBRKI TDB AAYXX CITATION ACYCR |
| DOI | 10.5573/JSTS.2021.21.3.222 |
| DatabaseName | DBPIA - 디비피아 Nurimedia DBPIA Journals CrossRef Korean Citation Index |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Engineering |
| EISSN | 2233-4866 |
| EndPage | 228 |
| ExternalDocumentID | oai_kci_go_kr_ARTI_9798997 10_5573_JSTS_2021_21_3_222 NODE10572327 |
| GroupedDBID | 9ZL ADDVE AENEX ALMA_UNASSIGNED_HOLDINGS C1A DBRKI FRP GW5 HH5 JDI KVFHK MZR OK1 TDB TR2 ZZE AAYXX CITATION ACYCR |
| ID | FETCH-LOGICAL-c241t-db26dffa4507be68ddf6cee1c02164739230bcf95d48c10c680b5acabd3e0d5a3 |
| ISSN | 1598-1657 |
| IngestDate | Sun Mar 09 07:53:56 EDT 2025 Thu Apr 24 23:07:25 EDT 2025 Tue Jul 01 02:28:33 EDT 2025 Thu Mar 13 19:37:19 EDT 2025 |
| IsPeerReviewed | false |
| IsScholarly | true |
| Issue | 3 |
| Keywords | punch-through Annealing FinFET reliability hot-carrier injection (HCI) logic transistors dielectric |
| Language | English |
| LinkModel | OpenURL |
| MergedId | FETCHMERGED-LOGICAL-c241t-db26dffa4507be68ddf6cee1c02164739230bcf95d48c10c680b5acabd3e0d5a3 |
| PageCount | 7 |
| ParticipantIDs | nrf_kci_oai_kci_go_kr_ARTI_9798997 crossref_citationtrail_10_5573_JSTS_2021_21_3_222 crossref_primary_10_5573_JSTS_2021_21_3_222 nurimedia_primary_NODE10572327 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2021-06-01 |
| PublicationDateYYYYMMDD | 2021-06-01 |
| PublicationDate_xml | – month: 06 year: 2021 text: 2021-06-01 day: 01 |
| PublicationDecade | 2020 |
| PublicationTitle | Journal of semiconductor technology and science |
| PublicationYear | 2021 |
| Publisher | 대한전자공학회 |
| Publisher_xml | – name: 대한전자공학회 |
| SSID | ssj0068797 |
| Score | 2.218716 |
| Snippet | Impact of device geometric structures and materials is discussed to improve power efficiency of punch-through current based electro-thermal annealing (ETA).... |
| SourceID | nrf crossref nurimedia |
| SourceType | Open Website Enrichment Source Index Database Publisher |
| StartPage | 222 |
| SubjectTerms | 전기공학 |
| Title | Impact of Dielectrics in SOI FinFET for Lower Power Consumption in Punch-through Current-based Local Thermal Annealing |
| URI | https://www.dbpia.co.kr/journal/articleDetail?nodeId=NODE10572327 https://www.kci.go.kr/kciportal/ci/sereArticleSearch/ciSereArtiView.kci?sereArticleSearchBean.artiId=ART002725519 |
| Volume | 21 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| ispartofPNX | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(3), 99, pp.222-228 |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1bb9MwFLa68QA8IK6iXCYLkacqJY3jJH7sJVOLYKvEJvYWJY4zqk3J1LV74E_xFznHTkzKEDcpci3XdlqfL8fnOOdCyFshOYrV3GUFnlaVrHRFwaQrVBaFygctV_utfTwK56fB-zN-1ut961gtbTf5UH79pV_J_1AV2oCu6CX7D5S1k0ID1IG-UAKFofwrGi-si-NsZfLZYMzlFTyxx4vB4ao6TE60GeEHTIU2WOpyqn0ur1obxyXsa1_cNltPE63Jxb2tgGHSeO8D8wZCAkfOLtud7rY8e41m9nWF8WPRctEe2evXE81Ga8Xmujp3P9c1vu23NjzbytW8Z7Bs_Yea0wi_YzWl8eMkEyeeopFGMnMEd8TUSabO2HPiACsicQR8NXYmzJnwto_QlTEM7DJiAdptaIJXD5VuA0mGuUFssrS03Nv4VzcoZV1WbPydm13dNy7oP28YnEcYuAKY4Kch_p0hXGxoh-4E4j46niWYFRlk0GiP3PFBL9GWpHOrb4VxZLL5tD_eeGnhTd7dvsWOJLRXraG8W20xqQNwho6Qc_KQPGioSccGao9IT1WPyf1OzMon5MaAjtYl7YCOrioKoKMGdBRARzXoqAYd7YAOe-6Aju6AjmrQ0QZ01ILuKTmFiadzt0ne4UoQCjdukfthUZZZAApHrsK4KMoQBLKRhCUIgwjEcublshQceIQceTKMvZxnMssLpryCZ-wZ2a_qSj0n1BOZlKooMhBfA-arzM9YEPm8DBWLWCn6ZNQuZCqbyPaYYOUyBQ0XFz_FxU9x8VO4WAqL3ycDO-bKxHX5be83QJ_0Qq5SDMeOn-d1erFOQelcpCISsRBRnxxY8tk5u6B58acOL8m9H8_UK7K_WW_Va5B5N_mBxtl3u7OkBg |
| linkProvider | ABC ChemistRy |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Impact+of+Dielectrics+in+SOI+FinFET+for+Lower+Power+Consumption+in+Punch-through+Current-based+Local+Thermal+Annealing&rft.jtitle=Journal+of+semiconductor+technology+and+science&rft.au=Dong-Woo+Cha&rft.au=Jun-Young+Park&rft.date=2021-06-01&rft.pub=%EB%8C%80%ED%95%9C%EC%A0%84%EC%9E%90%EA%B3%B5%ED%95%99%ED%9A%8C&rft.issn=1598-1657&rft.eissn=2233-4866&rft.volume=21&rft.issue=3&rft.spage=222&rft.epage=228&rft_id=info:doi/10.5573%2FJSTS.2021.21.3.222&rft.externalDocID=NODE10572327 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=1598-1657&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=1598-1657&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=1598-1657&client=summon |