Comparing three quantification methods on N/Si ratio analysis using electron energy loss spectroscopy (EELS)

• Published in: Micron (Oxford, England : 1993) Vol. 157; p. 103263
• Main Authors: Rui, Xue, Wang, Yun-Yu, Wang, Shixin, Chan, Sook Fun, Jin, Qiang
• Format: Journal Article
• Language: English
• Published: England Elsevier Ltd 01.06.2022
• Subjects: Quantitative composition analysis; Fourier-log deconvolution; Jump ratio; 3D NAND; EELS; STEM
• ISSN: 0968-4328; 1878-4291
• DOI: 10.1016/j.micron.2022.103263

Precision elemental analysis by EELS at a nano-meter scale is a desirable goal for industrial application, as well as basic scientific research on advanced material analysis. However, sample thickness variation leads to a systematic error in element quantification due to electron plural scattering events and prevents it to be a useful quantitative analytic method. In this paper, we compared three methods to minimize thickness effect: Fourier-log deconvolution, Jump ratio, and Si K-edge by quantifying the N/Si ratio versus different thickness on a standard Si3N4 crystal sample. The results indicated that Jump ratio method exceeded other two methods owing to its higher accuracy, short data acquisition time as well as minimum requirement for spectroscopy instrument. The jump ratio method was applied to calculate N/Si ratio in storage nitride layer of 3D NAND trench wafer and blanket wafer, both illustrated that the jump ratio method successfully corrected the thickness effect on EELS composition quantification and largely reduced the relative error compared with the non-corrected result. •Three thichness correction methods are compared: Fourier-log deconvolution, Jump ratio, and Si K-edge.•Jump ratio method exceeded other two methods.•The jump ratio method was applied to 3D NAND device.