Effect of vacuum-annealing on the d0 ferromagnetism of undoped In2O3 films

Vacuum-annealing was carried out on the pure indium oxide films deposited on Si (100) substrates by radiofrequency magnetron sputtering. Oxygen-deficiency states and room temperature d0 ferromagnetism were both detected in the as-grown and vacuum-annealed films. With more oxygen vacancies appeared t...

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Published inJournal of magnetism and magnetic materials Vol. 324; no. 18; pp. 2932 - 2935
Main Authors Sun, Shaohua, Wu, Ping, Xing, Pengfei
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.09.2012
Elsevier
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Summary:Vacuum-annealing was carried out on the pure indium oxide films deposited on Si (100) substrates by radiofrequency magnetron sputtering. Oxygen-deficiency states and room temperature d0 ferromagnetism were both detected in the as-grown and vacuum-annealed films. With more oxygen vacancies appeared through vacuum-annealing, the saturation magnetization increased rapidly from 0.5 to 5.5emu/cm3. The connection between the highly oxygen-deficiency states and the strong magnetic moment suggests that oxygen vacancies play a crucial role in mediating the ferromagnetism in In2O3 films. We think that this d0 ferromagnetism mainly stems from V0+ and oxygen vacancy clusters in the interfaces or grain boundaries. ► Effect of vacuum-annealing on the d0 ferromagnetism of pure In2O3 films. ► d0 ferromagnetism both exists in the as-grown and vacuum-annealed In2O3 films. ► Highly oxygen-deficiency state of the annealed In2O3 film was characterized by XPS. ► An enhancement in the moment from 0.5 to 5.5emu/cm3 was achieved upon annealing. ► The d0 ferromagnetism in our pure In2O3 films is related to oxygen vacancies.
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ISSN:0304-8853
DOI:10.1016/j.jmmm.2012.04.050