Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers

Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike stan...

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Bibliographic Details
Published inIEEE journal of quantum electronics Vol. 53; no. 3; pp. 1 - 6
Main Authors Chien-Yuan Chang, Wishon, Michael J., Daeyoung Choi, Junliang Dong, Merghem, Kamel, Ramdane, Abderrahim, Lelarge, Francois, Martinez, Anthony, Locquet, Alexandre, Citrin, D. S.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.06.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Institute of Electrical and Electronics Engineers
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Summary:Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage V(t) at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-toelectrical conversion. We achieve a timing jitter of 10 ps and a quality factor of ≳ 2 × 10 5 across the entire X-band, that ranges from 6.79 to 11.48 GHz. Tuning is achieved by varying the injection current J.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2017.2682702