Tunable X-Band Optoelectronic Oscillators Based on External-Cavity Semiconductor Lasers
Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike stan...
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Published in | IEEE journal of quantum electronics Vol. 53; no. 3; pp. 1 - 6 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.06.2017
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | Laser diodes with optical feedback can exhibit periodic intensity oscillations at or near the relaxation-oscillation frequency. We demonstrate optoelectronic oscillators based on external-cavity semiconductor lasers in a periodic dynamical regime tunable over the entire X-band. Moreover, unlike standard optoelectronic oscillators, we need not employ the time-dependent optical intensity incident on a photodiode to generate the microwave signal, but rather have the option of generating the electrical microwave signal directly as a voltage V(t) at the laser-diode injection terminals under constant current operation; no photodiode need be involved, thus circumventing optical-toelectrical conversion. We achieve a timing jitter of 10 ps and a quality factor of ≳ 2 × 10 5 across the entire X-band, that ranges from 6.79 to 11.48 GHz. Tuning is achieved by varying the injection current J. |
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ISSN: | 0018-9197 1558-1713 |
DOI: | 10.1109/JQE.2017.2682702 |