Detection of growth striations in single crystals by digital processing of topographic images

The possibility of detecting growth striations by digital processing based on analysis of the brightness and frequency characteristics of images has been demonstrated by the example of x-ray topographic contrast of a GaSb(Si) single crystal. It has been shown that a higher efficiency of detecting gr...

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Published inSurface investigation, x-ray, synchrotron and neutron techniques Vol. 2; no. 6; pp. 931 - 933
Main Authors Tkal, V. A., Okunev, A. O., Petrov, M. N.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.12.2008
Subjects
2007
Chemistry and Materials Science
Materials Science
Moscow
Neutrons and Electrons for Material Characterization (Shubnikov Institute of Crystallography RAS
Proceedings of the Sixth National Conference on Application of X-Ray
Surfaces and Interfaces
Synchrotron Radiation
Thin Films
Neutron Technique
Digital Processing
Wavelet Analysis
Decomposition Level
Surface Investigation
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Summary:The possibility of detecting growth striations by digital processing based on analysis of the brightness and frequency characteristics of images has been demonstrated by the example of x-ray topographic contrast of a GaSb(Si) single crystal. It has been shown that a higher efficiency of detecting growth striations in topograms is obtained by wavelet processing of the analyzed contrast.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451008060190