INFLUENCE OF DOPANTS AND DEPOSITION TEMPERATURE ON THE OPTICAL AND SOLID STATE PROPERTIES OF DYE-SENSITIZED NOVEL NANOHYBRID ZnxSnyOz THIN FILMS DEPOSITED USING SPRAY PYROLYSIS

Dye-sensitized Novel Nanohybrid ZnxSnyOz thin films were prepared on glass substrates using spray pyrolysis technique. The dye used is extract from the leaves of tectona grandis. A 0.1M of Zn2+ and 1% was used respectively. Depositions were done at different substrate temperature of 50oC, 100oC, and...

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Bibliographic Details
Published inJournal of Ovonic Research Vol. 16; no. 2; pp. 131 - 138
Main Authors UKWU, C. N., AGBO, P. E.
Format Journal Article
LanguageEnglish
Published 01.03.2020
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Summary:Dye-sensitized Novel Nanohybrid ZnxSnyOz thin films were prepared on glass substrates using spray pyrolysis technique. The dye used is extract from the leaves of tectona grandis. A 0.1M of Zn2+ and 1% was used respectively. Depositions were done at different substrate temperature of 50oC, 100oC, and 150oC. The effect Zn2+ ion and dye extract from tectona grandis leaves on optical and solid state properties of the films were examined and analysed. The result showed that the absorbance of the undoped SnO thin films at various substrate temperatures vary from about 0.1-0.7. The absorbance generally increased with deposition/ substrate temperature exhibiting a maximum for films deposited at 150oC. The average transmittance of both un-doped and Zn2+ doped SnO thin films at 350nm is above 90% regardless of the film thickness. The dye doped samples showed an improvement in optical transmission at 625nm. The reflectance spectra of all films exhibited a similar trend. Peak reflectance was observed at 350nm for un-doped and Zn2+ doped samples of SnO thin films while peak reflectance can be observed at 625nm for dye doped samples. It is also observed that the band gaps of the dye doped samples are lower: 1.55eV- 1.83eV than those of the Zn2+ doped samples: 1.60eV – 2.20eV. This showed that the incorporation of the dye shifted the fundamental absorption edge of the un-doped SnO thin films thus providing tuning effect of the band gap for device applications.
ISSN:1584-9953
1584-9953
DOI:10.15251/JOR.2020.161.131