Recharging dynamics of Al Nanoclusters in a GaAs matrix

The recharging processes in an Al-nanocluster layer embedded in GaAs that occur as a result of altering the voltage applied to the structure have been experimentally studied. It has been shown that charging and recharging times may differ from each other significantly. Charge transfer between nanocl...

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Bibliographic Details
Published inSurface investigation, x-ray, synchrotron and neutron techniques Vol. 6; no. 4; pp. 564 - 567
Main Authors Vostokov, N. V., Danil’tsev, V. M., Shashkin, V. I.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 01.07.2012
Subjects
Chemistry and Materials Science
Materials Science
Surfaces and Interfaces
Thin Films
Neutron Technique
Schottky Barrier Height
Metal Organic Vapor Phase Epitaxy
Metal Insulator Semiconductor
GaAs
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Summary:The recharging processes in an Al-nanocluster layer embedded in GaAs that occur as a result of altering the voltage applied to the structure have been experimentally studied. It has been shown that charging and recharging times may differ from each other significantly. Charge transfer between nanoclusters and a semiconductor matrix has been investigated.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451012070142