Analysis of nonexponential capacitance relaxation signals

The kinetics of charge transfer by deep energy levels of the semiconductor gap, describing nonexponential shape of capacitance relaxation signals, is suggested. A method of analysis of these signals, possessing higher accuracy and resolution in comparison with the conventional methods based on the r...

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Bibliographic Details
Published inRussian physics journal Vol. 52; no. 7; pp. 733 - 741
Main Authors Tatokhin, E. A., Budanov, A. V., Rudnev, E. V., Kadantsev, A. V., Semenov, M. E.
Format Journal Article
LanguageEnglish
Published Boston Springer US 01.07.2009
Subjects
Condensed Matter Physics
Hadrons
Heavy Ions
Lasers
Mathematical and Computational Physics
Nuclear Physics
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
Physics of Semiconductors and Dielectrics
Theoretical
relaxation deep-level spectroscopy
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Summary:The kinetics of charge transfer by deep energy levels of the semiconductor gap, describing nonexponential shape of capacitance relaxation signals, is suggested. A method of analysis of these signals, possessing higher accuracy and resolution in comparison with the conventional methods based on the relaxation-time approximation, is developed.
ISSN:1064-8887
1573-9228
DOI:10.1007/s11182-009-9292-6