High-frequency response and the possibility of detecting the quantum amplification mode in resonant-tunneling diode structures

The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. Based on the constructed analytical model of the steady-state current and high-frequency response in symmetric RTD structures with...

Full description

Saved in:
Bibliographic Details
Published inBulletin of the Lebedev Physics Institute Vol. 36; no. 1; pp. 14 - 20
Main Authors Klimenko, O. A., D’yakonova, N. V., Knap, V., Mityagin, Yu. A., Murzin, V. N., Savinov, S. A., Syzranov, V. S., Chuenkov, V. A.
Format Journal Article
LanguageEnglish
Published Heidelberg Allerton Press, Inc 2009
Subjects
Physics
Physics and Astronomy
Terahertz Range
Resonant Level
Terahertz Frequency Range
Electron Beam Incident
LEBEDEV Physic Institute
Online AccessGet full text

Cover

More Information
Summary:The conditions of the implementation of the quantum mode of microwave generation in semiconductor resonant-tunneling diode (RTD) structures were theoretically analyzed. Based on the constructed analytical model of the steady-state current and high-frequency response in symmetric RTD structures with finite barrier widths, high-frequency properties of RTDs in an external ac electric field were analyzed by numerical simulation methods. It was shown that the quantum amplification mode can appear not only in the high-frequency region of the terahertz range, but also at relatively low frequencies due to deformation of frequency dependences in a dc electric field.
ISSN:1068-3356
1934-838X
DOI:10.3103/S1068335609010035