Growth Control of Carbon Nanotubes Using Ion-Beam Irradiation Effect in the SiC Surface Decomposition Method

We have investigated ion-beam irradiation effects on the growth of carbon nanotubes (CNTs) in the SiC surface decomposition method. A SiC(000 1 ) surface was irradiated by Ar+ ion with 1 or 5 keV for 1 h and then annealed at 1700℃ for 2 h at a pressure of 2×10−2 Pa. We found that the CNTs grown on t...

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Bibliographic Details
Published inJournal of the Vacuum Society of Japan Vol. 57; no. 5; pp. 182 - 184
Main Authors SEO, Kotaro, TAKAMATSU, Sohei, KONDO, Toshinori, IKARI, Tomonori, NAITOH, Masamichi
Format Journal Article
LanguageJapanese
English
Published The Vacuum Society of Japan 2014
Subjects
Annealing
Carbon nanotubes
Damage
Decomposition
Ion beams
Ion irradiation
Irradiation
Silicon carbide
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Summary:We have investigated ion-beam irradiation effects on the growth of carbon nanotubes (CNTs) in the SiC surface decomposition method. A SiC(000 1 ) surface was irradiated by Ar+ ion with 1 or 5 keV for 1 h and then annealed at 1700℃ for 2 h at a pressure of 2×10−2 Pa. We found that the CNTs grown on the surface with 1 keV Ar+ ion irradiation are longer than CNTs grown without Ar+ ion irradiation. In the case of Ar+ ion irradiation at 5 keV, short CNTs are formed on the surface. These results indicate that damage to the SiC(000 1 ) surface affects the CNT formation in the SiC surface decomposition method.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1882-2398
1882-4749
DOI:10.3131/jvsj2.57.182