Strong Visible Light Emission from Zinc-Blende InGaN/GaN Pn Junction on Silicon Substrate

The zinc-blende GaN (c-GaN) crystals on Si(100) substrates were successfully grown by metal organic chemical vapor deposition (MOCVD) technique with BP buffer layer. The cubic phase purity was higher than 93%. We also grew InGaN single quantum well (SQW) on n-type c-GaN and cover with p-type c-GaN t...

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Bibliographic Details
Published inECS transactions Vol. 53; no. 2; pp. 87 - 91
Main Authors Nishimura, Suzuka, Hirai, Muneyuki, Nagayoshi, Hiroshi, Terashima, Kazutaka
Format Journal Article
LanguageEnglish
Published 01.01.2013
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Summary:The zinc-blende GaN (c-GaN) crystals on Si(100) substrates were successfully grown by metal organic chemical vapor deposition (MOCVD) technique with BP buffer layer. The cubic phase purity was higher than 93%. We also grew InGaN single quantum well (SQW) on n-type c-GaN and cover with p-type c-GaN to make pn junction. When the electric current passed through the pn junction, surprisingly strong light was emitted from the junction.
ISSN:1938-5862
1938-6737
DOI:10.1149/05302.0087ecst